Design of a wideband highly efficient GaN HEMT power amplifier for multiband applications

Abstract A distributed basic matching network (MN) designed method that can achieve multioctave bandwidth and highly efficient power amplifier (PA) for multiband applications is presented in this letter. The unit with a left-rotating T-type structure employed to construct the wideband MN, whose topology circuit parameters are acquired through optimization. Finally, impedance realized by MN falls into target region obtained using multi-harmonic bilateral pull technique desired frequency band. For proof of method, broadband PA has been designed, fabricated, measured commercialized GaN high electron mobility transistors (HEMT). results show implemented achieves 137.8% from 0.7 3.8 GHz. drain efficiency between 59% 70% an output greater than 39 dBm gain ranging 9 12.1 dB.